Interfacial reactions between impurities and slag onset of Si purification by slag addition

Abstract

The interfacial reactions between impurities (Al and Ti) and slag onset of Si purification by 51 mol% SiO2–34 mol% CaO–15 mol% MgO slag addition were studied to enhance impurity removal efficiency from Si. The Al distribution behavior at the Si/Slag interface was investigated; a short reaction time (10 s) resulted in the formation of successive SiO2–CaO–MgO–Al2O3 layers in the slag with a thickness of 10 µm; increasing the reaction time (60 s) resulted in the entire ternary slag being changed into SiO2–CaO–MgO–Al2O3 quaternary slag due to the diffusion of Al2O3. It was shown that the highest impurity removal rate of Al could be achieved at the onset of the slag refining process. Based on the Ti distribution at the Si/slag interface, the slag refinement with 51 mol% SiO2–34 mol% CaO–15 mol% MgO had no effect on Ti removal.