Abstract
Recently transition-metal nitrides and carbides have received great interest as diffusion barrier materials in contact structures for silicon semiconductor devices. Excellent stability of the contact structure is achievable through heat treatments of up to 600 °C when Ni is used as the top metal layer. However, the same transition-metal compounds show poor barrier properties with Al as the top layer if heat treated to 600 °C. We have therefore investigated the failure mechanism of transition-metal nitride and carbide barrier materials in Al overlayer metallizations. This knowledge has enabled us to develop high-temperature contact structures for silicon semiconductor devices by using an intermetallic compound of Al instead of plain Al for the top layer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
