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Abstract
Scanning photoelectron spectromicroscopy has been applied to study the interfacial chemistry and electronic properties of adjacent patterned Au and Ti/Au regions on GaN, fabricated by metal deposition at room temperature through appropriate masks. The lateral variations in the composition of the interfacial phases before and after annealing to 800 °C and their effect on local band bending are determined. The very small difference in the Schottky barrier heights measured in the adjacent Au/GaN and Ti/Au/GaN regions is identified as a property of the metal/GaN interfaces not predicted by the existing theoretical models.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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