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Abstract
It has been demonstrated that C54 TiSi 2 phase formation can be significantly enhanced by multi-thermal-shock (MTS) method. In this work, the enhancement mechanism of C54 phase formation and the interfacial reactions between TiSi 2 and Si were investigated. The results indicate that the semi-coherent interface between TiSi 2 C49 phase and Si substrate may be responsible for the rough surface of the TiSi 2/Si structure. However, the semi-coherent interface can be completely destroyed by multi-thermal-shock method, resulting in the smooth surface of the structure. It is believed that the multi-thermal-shock method induces numerous defects to increase the internal energy in the C49 phase, thus enhancing the C54 phase formation significantly.
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