Abstract
The growth kinetics of intermetallic compound layers formed between pure indium solder and bare Cu substrate by solid-state isothermal aging were examined at temperatures between 343 and 393 K for 0–4×106 s. A quantitative analysis of the intermetallic compound layer thickness as a function of time and temperature was performed. Experimental results showed that the Cu11In9 intermetallic compound was observed for bare copper substrate. Additionally, the thickness of the Cu11In9 intermetallic compound was increased with the aging temperature and time. The layer growth of the intermetallic compound in the couple of the In/Cu system followed a parabolic law over the given temperature range. As a whole, because the values of time exponent (n) were approximately 0.5, the layer growth of the intermetallic compound was mainly controlled by a diffusion mechanism over the temperature range studied. The apparent activation energy of Cu11In9 intermetallic compound in the couple of the In/Cu was 34.16 kJ mol−1.
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