Abstract
The characteristics of interfacial reactions and the valence band offset of HfO2 films grown on GaAs by atomic layer deposition were investigated by combining high-resolution x-ray photoelectron spectroscopy and high-resolution electron transmission microscopy. The interfacial characteristics are significantly dependent on the surface state of the GaAs substrate. Polycrystalline HfO2 film on a clean GaAs surface was changed to a well-ordered crystalline film as the annealing temperature increased, and a clean interface with no interfacial layer formed at temperatures above 600°C. The valence band offset of the film grown on the oxidized GaAs surface gradually increased with the stoichiometric change in the interfacial layer.
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