Abstract
The reaction mechanism of Ti adsorbed on the MgO(001) surface has been investigated using coaxial impact collision ion scattering spectroscopy (CAICISS) and reflection high energy electron diffraction. It is found that Ti is incorporated into at least four layers of the surface through the substitutional sites of the Mg ions even at room temperature. The diffusion of Ti occurs without disorder of the MgO lattice. After 1270 K annealing, the Ti atoms, existing in the outermost layer, form a 2×2 superstructure, where no protrusion or submergence of the substituting Ti occurs from the original MgO surface. The MgO surface with the incorporated Ti ions does not suffer the charging problems during the measurement of CAICISS. This is due to the emergence of electric conduction at the surface which is confirmed in situ by a 2-pin method.
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