Abstract
Interdiffusion and interfacial reaction of 95Pb-5Sn solder bumps and 37Pb-63Sn presolder in flip-chip solder joints during high-temperature storage were studied. Reaction temperatures included 100°C, 130°C, 150°C, and 175°C. It was found that Cu6Sn5 and Cu3Sn formed on the board side and (Ni,Cu)3Sn4 formed on the chip side after 100 h of aging. After 2000 h of aging at 175°C, the Ni under-bump metallization (UBM) was exhausted. This caused the (Ni,Cu)3Sn4 layer at the chip-side interface to be gradually converted into (Cu0.6Ni0.4)6Sn5. It was also found that the consumption of the Ni UBM was faster than the case where eutectic Sn-Pb solder was used for the entire joint. Nevertheless, the consumption of the Cu on the substrate side was slower than the case where pure eutectic Sn-Pb solder was used for the entire joint.
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