Abstract
A thin Cu layer (35 nm) deposited on SiO 2 has been mixed with 80 keV Ar + at room temperature, 550 and 650 K. Interfacial properties of irradiated samples were investigated with Rutherford backscattering spectroscopy, grazing angle X-ray diffraction and scratch test. Adhesion of Cu films was improved by a factor of 3 at a dose of 1.5 × 10 16 Ar 4/cm 2 in the case of ion beam mixing at room temperature, while the high temperature ion beam mixing enhanced the adhesion by a factor of 5. The ballistic mixing effects on the improvement of adhesion for the room temperature ion mixing and the creation of Cu 2O phase at the interface, which contributes to the enhancement of adhesion induced by ion beam mixing at high temperature, are described in the present paper.
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