Interfacial modification of in-situ polymerized AMPS/NiFe2O4 quantum dots for efficient and air-stable CsPbBr3 perovskite solar cells

Abstract

The regulation of the interface energetics and the simultaneous passivation of the surface defects of perovskite (PVK) film play an important role in improving the efficiency and stability of perovskite solar cells (PSCs). Here, a composite modification of poly(2-acrylamide-2-methylpropanesulfonic acid) (PAMPS)/NiFe2O4 quantum dots (NQDs) that is formed by the light-triggered polymerization of AMPS monomer in homogeneous AMPS/NQDs is launched at the interface of PVK/carbon in all-inorganic CsPbBr3 PSCs. Due to the higher hole mobility and conductivity of PAMPS/NQDs and its interface modification induced better energy level alignment and interfacial contact, the hole transport and extraction are significantly promoted. Combined with the simultaneous passivation of cations and anions (Cs+, Pb2+ and Br-) defects on CsPbBr3 PVK surface by the SO, CO, NH and OH groups in PAMPS, the non-radiative recombination is effectively restrained, rendering a champion power conversion efficiency of 10.21 % with excellent high humidity and temperature (85 % RH, 85 °C) and light soaking tolerances for PAMPS/NQDs composite modified carbon-based CsPbBr3 PSCs without encapsulation in air, which is markedly higher than the 6.81 % efficiency of the control device.