Interfacial misfit of zinc oxide films deposited on Si (100), (110) and (111) substrates

Abstract

Interfacial misfit between zinc oxide film and Si (100), (110) and (111) substrates has been studied using O lattice theory to understand the effect of substrate orientation on the film/substrate interfacial structure. It has been found that the lattice sites of ZnO and Si on the interface of ZnO (0002)//Si (111) are one to one correspondence, while the misfit of the other two interfaces is relatively large. The dislocation densities on these interfaces, which were determined from the dislocation networks, are 1·638, 0·588 and 0·718 nm−1 for the Si (111), (110) and (100) substrates respectively. Taking the lattice correspondence and the dislocation density into consideration, the degree of interface misfit between ZnO and Si (100), (110) and (111) substrates decreases in sequence.