Interfacial magnetism in stressed semiconductors with antiferromagnetic ordering

Abstract

Stressed heterojunctions with antiferromagnetic ordering, in which the primary semiconductors have mutually inverted band spectra, are investigated. It is shown that the interface-bound states formed in these heterojunctions are split with respect to spin. As a result, if the Fermi level falls within one of the bands of the interface states, magnetic ordering is induced in the plane of the interface, i.e., the interfacial magnetism phenomenon can be observed.