Interfacial graphene growth in the Ni/SiO2 system using pulsed laser deposition

Abstract

We report pulsed laser deposition (PLD) using a solid carbon source as a viable technique to obtain direct, transfer-free monolayer and bilayer graphene on SiO2. First, a 300 nm thick nickel film is deposited on a silicon dioxide layer (300 nm) grown in a Si substrate. Next, PLD of carbon is performed at 1010 °C. The nickel film is then removed, and an interfacial graphene is obtained directly on the silicon dioxide film, without the need of a transfer process. Raman spectroscopy confirms the presence of high-quality bilayer graphene with a coverage of better than 60%.