Abstract
The equilibrium geometries of embedded binary eutectic alloy nanostructures are used to determine the interfacial free energies between two phases of a strongly segregating alloy and the matrix. The solid Ge-SiO2 interfacial free energy at 600°C is determined to be 0.82–0.99 J/m2, in good agreement with estimates obtained from stress relaxation experiments.
Highlights
A nanostructure is defined by its surfaces and interfaces
Interfacial effects can lead to large shifts in equilibrium melting points[1] and can alter melting/solidification kinetics.[2]
The equilibrium geometry of a binary eutectic alloy nanostructures (BEANs) is determined by the relevant interfacial free energies,[12] and characterization of this geometry enables one to deduce ratios of the relevant interfacial free energies
Summary
A nanostructure is defined by its surfaces and interfaces. At the nanoscale, interfaces play a significant role in the materials’ properties. Confinement within a matrix offers the opportunity of changing interfacial free energies (e.g., through choice of nanostructure and matrix materials) and can result in a number of interesting geometries and properties.[3,4,5,6,7,8,9] For example, implantation of Ge and Sn within the same SiO2 matrix, followed by annealing, leads to the formation of binary eutectic alloy nanostructures (BEANs).
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