Abstract

AgBiS2 is a promising and environmentally friendly absorber material for use in hybrid solar cells (HSC). Here, we report a study on the evolution of interfacial phenomena observed during deposition of AgBiS2 onto mesoporous TiO2 by the two-stage successive ionic layer adsorption-reaction method. With this approach, inorganic–organic HSC were assembled using Co2+ doped P3HT as hole transport layer. Surface photovoltage spectroscopy and contact potential difference measurements corroborated a low density of trap states in the ternary chalcogenide and lack of majority carrier barriers, compared to the binary absorbers used as reference. The best HSC exhibits a power conversion efficiency of 2.87% under irradiation of 100 mW cm−2, which is attractive for an easily scalable, no capping, no passivating synthesis of AgBiS2.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.