Interfacial engineering in colloidal “giant” quantum dots for high-performance photovoltaics

Abstract

Colloidal quantum dots (QDs) are semiconductor nanocrystals which exhibit discrete energy levels. They are promising building blocks for optoelectronic devices, thanks to their tunable band structure. Here, we explore a nanoengineering approach to highlight the influence of an alloyed interface on the optical and electronic properties of CdSe/(CdS)6 “giant” core/shell (CS) QDs by introducing CdSexS1-x interfacial layers between core and shell. By incorporating of CdSexS1-x interfacial layers, CdSe/(CdSexS1-x)4/(CdS)2 (x = 0.5) core/shell (CSA1) QDs exhibit a broader absorption response towards longer wavelength and higher electron-hole transfer rate due to favorable electronic band alignment with respect to CS QDs, as confirmed by optical absorption, photoluminescence (PL) and transient fluorescence spectroscopic measurements. In addition, simulations of spatial probability distributions show that the interface layer enhances electron-hole spatial overlap. As a result, CSA1 QDs sensitized solar cells (QDSCs) yield a maximum photoconversion efficiency (PCE) of 5.52%, which is 79% higher than QDSCs based on reference CS QDs. To fully demonstrate the structural interface engineering approach, the CdSexS1-x interfacial layers were further engineered by tailoring the selenium (Se) and sulfur (S) molar ratios during in situ growth of each interfacial layer. This graded alloyed CdSe/(CdSexS1-x)5/(CdS)1 (x = 0.9–0.1) core/shell (CSA2) QDs show a further broadening of the absorption spectrum, higher carrier transport rate and modified confinement potential with respect to CSA1 QDs as well as reference CS QDs, yielding a PCE of 7.14%. Our findings define a promising approach to improve the performance of QDSCs and other optoelectronic devices based on CS QDs.