Abstract
Capacitance–voltage (C–V) characteristic of ultrathin polyimide (PI) Langmuir–Blodgett (LB) films is discussed theoretically and experimentally taking into account the interfacial electrostatic phenomena and interfacial electronic states at the metal/PI LB film interface. It was found that the apparent film thickness decreases due to the charge exchange phenomena at the metal/film interface. It was also found that electrical insulating properties of the Au/PI LB film/Al device depended on the polarity of external voltage, probably due to the formation of the electrostatic interfacial electric field of 108 to 109 V/m. © 2000 Scripta Technica, Electr Eng Jpn 134(3): 9–15, 2001
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