Abstract
ABSTRACT PMN-PT (70/30) thin films were deposited by rf magnetron sputtering on silicon substrate. Two types of bottom electrodes were studied: classical TiO x /Pt and LNO. The first one is deposited by sputtering and the LNO by sol gel. Depending on the electrode nature, thickness, … the diffusion such as oxygen, lead or other species are completely different. PMN-PT annealing temperature were studied in the range of 450 to 700°C; the interface quality is directly related to the annealing temperature. Our study was focused on the bottom electrode/PMN-PT thin films interfaces. We present dielectric and ferroelectric. They are analysed in the view of interfacial layers (nature and thickness), films structure and microstructure.
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