Abstract
Pulsed laser atom probe tomography was employed to study the interfacial chemistry in an InAs/GaSb superlattice nanostructure. The InAs-on-GaSb anion sublattice interface was found to be wider than the GaSb-on-InAs interface, in good agreement with previous electron microscopy studies. Hetero-nuclear group-V cluster ions at the InAs-on-GaSb interface as detected by atom probe are indicative of a strong As for Sb exchange reaction when InAs is grown onto GaSb.
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