Interfacial charge transfers and carrier regulation characteristics of narrow/wide band gap TMDs@Ga2O3 n-n heterojunction film

Abstract

The application of transition metal dichalcogenides (TMDs) in many optical devices has been seriously limited by its narrow band-gap and high electron-hole recombination rate. Therefore, more studied are desired for exploring the novel TMDs/Ga2O3 heterostructures with excellent photoexcitation properties and interfacial dynamics. Herein, the WSe2/Ga2O3 and MoS2/Ga2O3 heterostructures were successfully prepared by a two-step radio frequency magnetron sputtering method. The growth mechanism and interfacial charge transfer of the wide and narrow TMDs/Ga2O3 heterostructures are considered. The X-ray diffraction results show that the (002) orientation of the WSe2 and MoS2 was suppressed, which can be attributed to interfacial interaction. Compared to pure TMDs, the A1 g was blue-shifted in the Raman spectrum for the proposed heterostructures, which is related to the decrease of the electron density. The photoluminescence emission of TMDs/Ga2O3 heterostructures was enhanced mainly due to the transition from trions recombination to exciton recombination. Meanwhile, the transmission properties of electrons under the built-in electric field are further confirmed by the transient absorption spectroscopy. Effective charge separation not only reduces radiation emission rate but also significantly enhances the nonlinear optical response of TMDs. An open-aperture Z-scan measurement was carried out to confirm that Ga2O3 is a promising candidate for enhancing the saturable absorption or reverse saturable absorption of TMDs.