Abstract
The central challenge in realizing non-volatile, E-field manipulation of magnetism lies in finding an energy efficient means to switch between the distinct magnetic states in a stable and reversible manner. In this work, we demonstrate using electrical polarization-induced charge screening to change the ground state of magnetic ordering in order to non-volatilely tune magnetic properties in ultra-thin Co0.3Fe0.7/Ba0.6Sr0.4TiO3/Nb:SrTiO3 (001) multiferroic heterostructures. A robust, voltage-induced, non-volatile manipulation of out-of-plane magnetic anisotropy up to 40 Oe is demonstrated and confirmed by ferromagnetic resonance measurements. This discovery provides a framework for realizing charge-sensitive order parameter tuning in ultra-thin multiferroic heterostructures, demonstrating great potential for delivering compact, lightweight, reconfigurable, and energy-efficient electronic devices.
Highlights
The central challenge in realizing non-volatile, E-field manipulation of magnetism lies in finding an energy efficient means to switch between the distinct magnetic states in a stable and reversible manner
Tsymbal et al revealed theoretically that the charge effect originates from spindependent screening in ferro/piezo/dielectric layers induced by the electric field which leads to notable changes in the surface magnetization and surface magnetocrystalline anisotropy (MAE) in Fe/ BaTiO3 multiferroic heterostructures
Nan et al studied co-existence of strain and charge effect ME coupling in metallic magnetic thin film (NiFe)/ferroelectric (PMN-PT) slab multiferroic heterostructures and reversible, non-volatile voltage control of magnetic anisotropy was realized corresponding to a giant effective tunable magnetic field of,200 Oe29
Summary
The central challenge in realizing non-volatile, E-field manipulation of magnetism lies in finding an energy efficient means to switch between the distinct magnetic states in a stable and reversible manner. A stable and reversible 71u and 109u ferroelastic polarization switching occurs in FeCoB/lead magnesium niobate-lead titanate (PMN-PT) (011), contributing to www.nature.com/scientificreports large in-plane strain and resulting in non-volatile voltage-impulse tuning of FMR and manipulation of magnetization direction. Interfacial charge screening effects have been proposed to be an ideal way to realize non-volatile electrical control of magnetization in multiferroic thin films, as this effect is independent of strain This effect was initially predicted by first-principle calculations[21], demonstrated in many multiferroic systems including metallic/dielectric/ferroelectric heterostructures: Fe/BaTiO3 (BTO)[21], Ni/ BaTiO3 (BTO)[22,23], Fe/MgO24, CoFe/MgO25, Fe/BTO26,27, NiFe/ SrTiO328, NiFe/PMN-PT29, Co/GdxO31, Co/P(VDF-TrFE) (copolymer ferroelectric of 70% vinylidene fluoride with 30% trifluoroethylene)[32] and Oxides/ferroelectric heterostructures: La0.8Sr0.2MnO3 (LSMO)/Pb(Zr0.2Ti0.8)TiO3 (PZT)[33,34]. Improvement of non-volatility and tunability have been achieved in magnetic thin film/ ferroelectric slab multiferroic heterostructures, there are still fundamental limits like high voltage consumption (400 V) and existence of strain effects need to be eliminated for charge mediated voltage control of magnetism
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