Abstract
Based on density functional theory (DFT), the interface contact and electronic properties of Ag/WS2 (SnS2) interfaces are studied under vertical strain and electric field, respectively. For Ag/WS2 interface, 12% compression strain or −0.40 VÅ−1 electric field can induce the transition of interface charge from n-type Schottky contact to ohmic contact, which is due to the transfer of interface charge from Ag to WS2. Under the action of strain and electric field, the interface of Ag/SnS2 shows ohmic contact. Our research shows that, as the interface system of field effect transistor (FET), Ag/WS2 can show excellent performance, while Ag/SnS2 cannot because it does not have the characteristics of FET.
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