Abstract
SnO2 as an electron transport layer (ETL) has recently been used for perovskite solar cells (PSCs) due to high transmittance and electron mobility. However, the mismatched band energy alignment of ETL and perovskite layer result in serious nonradiative recombination limiting the improvement of PSCs performance. Here, 2-(Diphenylphosphino)ethanaminium tetrafluoroborate (DPEBF4) as buried interface was introduced between ETL and perovskite. The [BF4]− anion in DPEBF4 can interact with SnO2 to reduce the surface defect of SnO2. While [DPE]+ cation is more inclined to interact with Pb2+ and I−, the terminal strong interaction will promote crystallization of perovskite film quality and passivate buried surface defects. As a result, device performance was significantly improved by introducing DPEBF4 layer, the power conversion efficiency (PCE) increase from 20.50 % for control devices to 23.84 %. The work provides an interfacial double-tonic strategy for ETL and perovskite crystals to achieve high-performance perovskite photovoltaic devices.
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