Abstract
The interfacial behavior of the bonded p-GaP/n-GaAs wafers, with activated surfaces, that use an Ar fast atom beam was investigated. The bonding strength of the interface was 9.8 MPa at room temperature, and the GaP was fractured and remained on the GaAs following the tensile test. Two amorphous layers with identical thicknesses of 3.5 nm were found across the interface without annealing. When annealing was executed, the electrical current-voltage characteristics improved and the amorphous layers diminished across the interface. The amorphous layers adjacent to the GaP across the interface are attributed to the Ga-rich layer because of the depletion of P.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
