Interfacial barrier characteristics of LTGaAs on low doped GaAsGaAs/nGaAs and LTGaAs/pGaAs layers

Abstract

As-grown (σ-conductive) and annealed (semi-insulating (SI)) low temperature (LT) double layers have been analysed by conductivity profiling. The σ-LTGaAs/GaAs junction represents an NT+/GaAs junction with no noticeable depletion effects in the σ-LTGaAs. The SILTGaAs/GaAs junction is an SI(n−)GaAs/ GaAs junction with depletion effects in LTGaAs. The Fermi-level of the LTGaAs lies in all cases above the nGaAs free surface potential and is estimated to satisfy 0.18 eV < | Ec − EF | < Φs.