Abstract
We investigate interfacial band bendings in Al ohmic contacts to laser-irradiated Ga-face and N-face n-GaN using synchrotron radiation photoemission spectroscopy. Both samples show increased band bendings after annealing at , but annealing at leads to completely opposite band bendings. These two different behaviors with annealing temperature are consistent with electrical properties of the contacts and are well explained by the annihilation of N vacancies at the interface and the formation of polarization-induced sheet charges at AlN/GaN heterointerfaces, respectively.
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