Abstract
Interfacial and electrical properties of atomic-layer-deposited gate dielectric on epitaxial GaAs (epi-GaAs)/Ge and bulk GaAs substrates have been investigated. Atomic layer deposition provides a unique opportunity to integrate high quality gate dielectrics on epi-GaAs. The cross-sectional transmission electron microscopy of a /III-V gate stack shows a similar interfacial layer thickness for on bulk p-GaAs and epi-GaAs substrates. However, X-ray photoelectron spectroscopy shows a Ga oxide-rich interfacial layer after postdeposition annealing at for films grown on epi-GaAs. Although the epi-GaAs surface is rough with nanoscale features, the electrical properties of the gate dielectric deposited on epi-GaAs are comparable with bulk p-GaAs-based devices. The Au//epi-GaAs gate stack shows a low frequency dispersion (13%), hysteresis voltage (0.72 V), and a leakage current density of at (where FB is flatband) for an equivalent oxide thickness of 1.4 nm.
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