Interface-supersaturation estimated from the shape of steps on the surface of InP MCE by LPE

Abstract

Shape of the steps in the InP microchannel epitaxy (MCE) was investigated to determine the surface supersaturation, σ, during the MCE growth. σ near the stacking fault (SF) where 2-D nuclei are generated has been estimated. The ratio of the width-to-thickness (W/T ratio) of the MCE layer grown in the mode of 2-D nucleation at a SF is found to increase with decreasing σ. This dependence is similar to that of the growth from a spiral step but σ, where the W/T ratio starts to increase was found to move to a lower value. The mechanism by which the W/T ratio is determined is also discussed.