Abstract
Shape of the steps in the InP microchannel epitaxy (MCE) was investigated to determine the surface supersaturation, σ, during the MCE growth. σ near the stacking fault (SF) where 2-D nuclei are generated has been estimated. The ratio of the width-to-thickness (W/T ratio) of the MCE layer grown in the mode of 2-D nucleation at a SF is found to increase with decreasing σ. This dependence is similar to that of the growth from a spiral step but σ, where the W/T ratio starts to increase was found to move to a lower value. The mechanism by which the W/T ratio is determined is also discussed.
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