Abstract
2D transition metal dichalcogenides (TMDCs) have been extensively attractive for nano-electronics and nano-optoelectronics due to their unique properties. Especially, WSe2, having bipolar carrier transport ability and sizable bandgap, is a promising candidate for future photodetectors. Here, we report an in-plane WSe2 homojunction formed by the interface gate of the substrate. In this architecture, an insulated h-BN flake was used to make only part of WSe2 flake contact substrate directly. Finally, the structures of WSe2/substrate and WSe2/h-BN/substrate construct an in-plane homojunction. Interestingly, the device can operate in both photovoltaic and photoconductive modes at different biases. As a result, a responsivity of 1.07 A W−1 with a superior detectivity of over 1012 jones and a fast response time of 106 μs are obtained simultaneously. Compared with previously reported methods adopted by chemical doping or electrostatic gating with extra bias voltages, our design provides a more facile and efficient way for the development of high-performance WSe2-based photodetectors.
Highlights
In recent decade, 2D transition metal dichalcogenides (TMDCs) have drawn great attention owing to their particular properties
It can be seen that part of WSe2 flake is placed on h-BN flake (WSe2-h) and the other part contacts the Si/SiO2 substrate directly (WSe2-S)
interface gate (IG) is produced by the trapped charges at the SiO2 surface
Summary
2D transition metal dichalcogenides (TMDCs) have drawn great attention owing to their particular properties. High in-plane mobility, tunable bandgap, mechanical flexibility, strong light-matter interaction, and easy processing make them very competitive for future nano-optoelectronics devices [1–20]. Tungsten diselenide (WSe2), a bipolar semiconductor with facile carrier-type manipulation, allows remarkably potential applications in the junction-based photodetectors [21–28]. The main strategies of constructing junction solely in WSe2 include chemical doping and electrostatic gating. An intramolecular WSe2 p-n junction was reported [26]. The n region and p region within WSe2 were formed by polyethyleneimine chemical doping and back gate control, respectively.
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