Abstract
The mechanism of operation of the `interface-engineered' high-Tc Josephson junctions with ion-modified barrier has been discussed. The analysis is performed for a YBaCuO base electrode modified by Ar+ and O+ ions. Using the diffusion coefficients of each YBaCuO component it is shown that at the counter-electrode deposition temperature (about 780 °C) the O and Cu defects anneal out and the Ba and Y sublattice disorder remains the only factor to play an important role in YBaCuO interface modification. The nature of the barrier in these devices seems to be very complicated, probably `insulator/normal conductor/superconductor with reduced critical temperature' and the junctions can be described as S-I-N-S´-S.
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