Abstract
A temperature-dependent analytical model of a 6H-SiC inversion channel MOSFET is developed. The model is based on an analytical solution of Poisson's equation including incomplete ionization of dopant impurities, continuous interface trap distribution and Fermi–Dirac statistics. The expressions developed for surface potential and threshold voltage include the presence of increasing interface trap density (Dit) towards the edge of the conduction band. The developed surface potential can also be used to get an accurate value of the threshold voltage. The charge sheet approach is used incorporating the effect of body leakage current and drain/source contact region resistances. Some of the results obtained are verified with the experimental data at different temperatures, which confirms the validity of the present model.
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