Interface tomography of GaInAs/AlInAs quantum cascade laser active regions

Abstract

We present a high-resolution electron tomography study of buried ultra-thin layers and their interfaces from the active region of a (Ga,In)As/(Al,In)As quantum cascade laser (QCL) test structure. Using a high-angle annular dark-field scanning transmission electron microscopy image series, a three-dimensional (3D) reconstruction of the complex layer structure is obtained. From this 3D information, we determine quantitative values for the chemical width and, simultaneously and independently, the root mean square roughness (rms) and lateral correlation length of the individual interfaces of a cascade using topographic height maps. The interfacial widths are comparably small for all interfaces within a cascade and the layer thicknesses show only a small standard deviation of less than one monolayer. The rms roughness is systematically lower at the direct (Ga,In)As-on-(Al,In)As interface compared to its inverse. In addition, using the one-dimensional height–height correlation function, different lateral correlation lengths along the two perpendicular in-plane directions are detected indicating a distinct anisotropy of the interface morphology. Our accurate and comprehensive results on the QCL test structure will serve as feedback to evaluate the growth process and help to assess the performance of corresponding future laser devices in detail.