Abstract
Interface structures of ultrathin Ti films grown on W(110) have been studied by low energy electron diffraction (LEED) and Auger electron spectroscopy (AES) in a wide range of annealing temperatures. The interface structures observed are interpreted to be due to site-coincidence growth (commensurate growth) and rotational epitaxy (incommensurate growth), respectively. The first monolayer of titanium is very strained with a large unit-cell expansion of 12.7% relative to that of Ti(0001). Deposition of additional Ti atoms destroys the strained structure, leading to rotational epitaxy: two Ti(0001) domains rotating mutually by 9.9 °. A thermally stable Ti bilayer exists at high annealing temperatures.
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