Abstract
Interface microstructure and strain relaxation of atomic-layer-epitaxy-grown CdSe on ZnSe/GaAs〈001〉 was investigated by using transmission electron microscopy and high-resolution transmission electron microscopy techniques. The CdSe epilayer is characterized with fluctuated misorientations along the interface, irregularly distributed stacking faults (SFs), and an array of misfit dislocations (MDs) composed of 60°, Lomer, and partial types. It is found that the fluctuated misorientation is related to the proportion of different 60° MDs and SFs, and this causes the local strain difference. The analysis of MDs is facilitated by using a digital image processing method and allows a clear image of a Lomer MD formed by interaction of two 60° MDs as well as the value of remaining local strains by measuring the density of MDs.
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