Abstract
The interface structure between the Si and NiSi 2 epitaxially grown on the ( ▪12) Si substrate was studied using high resolution transmission electron microscopy and computer image simulation. The results showed that the interface between Si and NiSi 2 epitaxially grown on the ( ▪12) Si substrate has six different types: type A NiSi 2 ( ▪11)/( ▪11) Si, type A NiSi 2 (001)/(001) Si, type B NiSi 2 (1 ▪ ▪)/(1 ▪1) Si, type B NiSi 2( ▪12)/(1 ▪2) Si, type B NiSi 2 (2 ▪1)/(001) Si, and type B NiSi 2 (1 ▪ ▪)/(1 ▪0) Si. And there are one or more different atomic structures for one type of interface.
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