Abstract
Material integrations of GaN/GaN and Al0.25Ga0.75N/GaN semiconductors through wafer bonding technology were reported in this work. The wafer surface and interface microstructures were characterized by scanning electron microscopy and energy dispersive x-ray spectroscopy. The interface adhesion (bonding strength) was estimated based upon the interface fracture energy γo measured by double-cantilever beam technique. The interface adhesion properties of several different wafer-bonded III-V semiconductors were also compared. By comparing the atomic chemical bond energy Eo with the measured interface fracture energy γo, the bondability of a few major III-V semiconductors was analyzed.
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