Abstract
We have studied the interface states (IFSs) of AlSb/InAs multiple quantum wells (MQWs) with an AlAs-like interface. The MQWs were grown by molecular beam epitaxy (MBE) using a proper shutter sequence at their interface to control the AlAs-like interface. The MQWs were evaluated by x-ray diffraction, photoluminescence, Hall and absorption measurements. These measurements revealed that IFSs at the AlAs-like interface originate from anticite As defects at the interface.
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