Abstract
The density of surface states in the Si-SiO 2 system depends on the oxidation conditions and post oxidation treatment. It increases with oxidation rate, decreases with oxidation temperature, and is lower for the (100) than for the (111) orientation. It was found that the surface states present form two groups: (1) donors near or above the Si conduction band and (2) donors and/or acceptors in the forbidden band. The density of states in both groups can be reduced to essentially zero by high temperature annealing. Post-oxidation H 2-treatment affects only states in group (2). It is suggested that surface states are associated with disorder in the interface region, and can, under proper conditions, be practically eliminated.
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