Abstract
Abstract Some results about the surface states and carrier mobility in p- and n-channel MOST structures, subjected to gamma radiation are presented. The experimental data are obtained by means of differential MOS inverter characteristics and Hall effect measurements in the conductive channel under the gate. The interpretation of the results is carried out on the basis of a theoretical analysis of the fast surface state spectrum at semiconductor/insulator interface. The assumptions and limitations of the physical model used are also discussed.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
