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Abstract
In this study, a dielectric improvement of Al2O3 by atomic layer deposited with a thickness of 40 nm on β-Ga2O3 was reported. The flat-band voltage shift and hysteresis can be reduced significantly by post deposition anneal (PDA) in a Al2O3/β-Ga2O3 metal-oxide-semiconductor capacitor (MOSCAP). Also, an interface trap density (Dit) of 7 × 1012 cm-2/eV-1 was obtained at 0.2 eV from conduction band by Terman method.
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