Abstract
The influence of process parameters on the interface shape of silicon ribbon grown by the edge-defined film-fed growth (EFG) technique has been studied with the help of finite element solutions of the heat and mass transport equations. The interface shape is calculated to be convex toward the melt for a wide range of growth parameters. Significant inhomogeneities of segregated impurities through the ribbon thickness are associated with this interface shape for impurities with segregation coefficients much less than unity. The influence of asymmetry in die geometry and temperature fields on interface configuration and solute segregation is examined. Interface tilt produced by this asymmetry is shown to lead to deviations from normal segregation behavior at large tilt angles.
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