Abstract
We investigated the imprint effect in ferroelectric capacitors and field effect transistors (FETs) with a poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] ferroelectric insulator. The shift in switching voltages and the change in the ferroelectric FET (FeFET) channel conductance were measured as a function of time and the thickness of the ferroelectric layer. Analyzing our experimental data, we show that the imprint originates from interface-induced processes, which effectively screen polarization charges in P(VDF-TrFE). This phenomenon significantly influences the retention of FeFET channel conductance and the memory functionality of FeFET with P(VDF-TrFE).
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