Abstract
Electronic transport properties of very thin undoped GaInP/GaAs quantum wells have been measured by temperature dependent low field Hall effect and by Shubnikov–de Haas effect. Strong Shubnikov–de Haas oscillations were observed after increasing the electron concentration via the persistent photocurrent effect. Low temperature mobilities of up to 70 000 cm2/V s at carrier concentrations of 6.5×1011 cm−2 were observed in a 20 Å quantum well. The results are compared with the theory of interface roughness scattering which indicates extremely smooth interfaces; however, discrepancies between experiment and theory are observed.
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