Abstract
The electron mobility limited by the interface-roughness scattering in a GaAs/AlxGa1-xAs superlattice is studied as a function of the period (the well width LW and the barrier thickness LB) and the temperature. If the superlattice period is short and the electronic states resemble that of the 3D state, the mobility is limited by the interface-roughness scattering at low temperatures and insensitive to the temperature, in good agreement with experimental results. Using a finite potential-barrier height, it is shown that the variation of the mobility as a function of the quantum well width LW is not so steep as that of the single-quantum-well structure assuming an infinite potential-barrier height.
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