Abstract

In-plane electronic transport in thin layered magnetic structures composed of two ferromagnetic films separated by a nonmagnetic spacer is analyzed theoretically in the Born approximation. Particular attention is paid to the role of interface roughness in the giant magnetoresistance (GMR) effect. The analysis applies to self-affine interfaces described by the k-correlation model. Our results show that GMR is sensitive to the roughness exponent H (0⩽H⩽1) in a manner that depends on spin asymmetries for bulk and interfacial scattering. The limit of low electron concentration is also considered.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call