Abstract
Heterojunction solar cells consisting of an n-type a-Si:H(n) emitter and a p-type monocrystalline silicon wafer have been studied with particular emphasis on the role of interface recombination. It is shown that the form of the I– V characteristics and the effective interface recombination velocity depend on the treatment of the Si-wafer prior to the deposition of the amorphous emitter. Numerical simulation suggests that the non-exponential (S-shape) dependence of the I– V curves under illumination arises from a high density of interface states which results in enhanced recombination via interface states.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
