Interface Recombination in Depleted Heterojunction Photovoltaics based on Colloidal Quantum Dots

Abstract

AbstractInterface recombination was studied in colloidal quantum dot photovoltaics. Optimization of the TiO2‐PbS interface culminated in the introduction of a thin ZnO buffer layer deposited with atomic layer deposition. Transient photovoltage measurements indicated a nearly two‐fold decrease in the recombination rate around 1 sun operating conditions. Improvement to the recombination rate led to a device architecture with superior open circuit voltage (VOC) and photocurrent extraction. Overall a 10% improvement in device efficiency was achieved with Voc enhancements up to 50 mV being realized.