Abstract
Aging experiments on ridge waveguide (RW) InGaAsP/InP laser diodes at elevated temperatures have been combined with observations of the injected carrier balance inside the laser structure. Measurements of the spontaneous emission intensity ( P) and a.c. cut-off frequency ( ƒ c ) as a function of the injection level (current and applied voltage) indicate a minority carrier lifetime decrease after the stress tests. Additionally, the spectral analysis of P provides information on barrier leakage current enhancement. Probably the degradation of P is caused by interface reactions.
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