Abstract
The electrical properties of room-temperature-grown oxides on Ge-rich SiGe layers are reported. X-ray photoelectron spectroscopy was used to investigate the room-temperature oxidation of thick Ge-rich layers on relaxed SiGe and Ge(001) substrates. The electrical properties of the oxides (as-grown and subsequently annealed) were studied using capacitance–voltage, conductance–voltage, and current–voltage characteristics of metal-oxide semiconductor (MOS) capacitors fabricated using these oxides. It is shown that the electrical properties of room-temperature-grown ultrathin oxides are reasonably good and may find applications in Ge MOS field effect transistors to improve the performance of future Ge complementary MOS technology. The effects of postmetal annealing on the interface state density and flatband voltage are also discussed.
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