Abstract
With the goal to demonstrate feasibility of high-mobility buried channel, we used in-situ high-k deposition approach and show for the first time operational MOSFET with buried HfO 2/In 0.52Al 0.48As/In 0.53Ga 0.47As/InP channel with mobility 1800 cm 2/V-s at 3×10 12 cm −2 and e-mode operation. Interface properties are compared with a similar gate stack with 2 monolayer thick InGaAs “passivation” layer between InAlAs and the oxide. The latter gate stack has shown significantly improved gate control and ON/OFF ratio due to reduction of the interface state density.
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